• Steven Bentley
    • University of Glasgow, Scotland
    • Progress in III-V MOSFETs for high performance CMOS
    • Jean Camassel
    • Université Montpellier 2, FRANCE
    • Graphene on SiC: epitaxial growth and material characterization
    • Nikos Chaniotakis
    • University of Crete, Greece
    • Inorganic-organic semiconductor heterostructures in biosensing and bioelectronics
    • Jean-Michel Chauveau
    • CRHEA-CNRS, France
    • Homoepitaxy of ZnMgO/ZnO heterostructures
    • George Dimitrakopulos
    • Aristotle University of Thessaloniki, Greece
    • Heteroepitaxial nanostructures in nonpolar and semipolar III-Nitride semiconductors
    • Eleftherios N. Economou
    • FORTH and University of Crete, Greece
    • Left-handed metamaterials
    • Christoph Gaquiere
    • IEMN, France
    • Progress in InAlN/GaN HEMTs
    • Henri Happy
    • IEMN, France
    • Carbon nanotube electronics: focus on RF applications
    • Masaaki Kuzuhara
    • University of Fukui, Japan
    • Next challenges in GaN HEMT electronics
    • Alexandru Müller
    • IMT-Bucharest
    • Membrane supported microwave and millimeter wave circuits based on III-V semiconductor micromachining
    • Ulrich  Schwarz
    • Fraunhofer, Germany
    • (Al,In)GaN laser diodes
    • Akihiko Yoshikawa
    • Chiba University, Japan
    • Proposal and fabrication of novel asymmetric structure GaN/1ML-InN/InGaN/GaN QWs for high efficiency solar cells